AlGaN/GaN HEMTs - Globe Thesis

Keyword [AlGaN/GaN HEMTs] Result: 21 - 40 \| Page: 2 of 3
21.	Electric Field Optimization And Frontier Fabrication Techniques For High Voltage Enhancement-Mode AlGaN/GaN HEMTs
22.	Study Of Polarization Coulomb Field Scattering Influfence On The Gate-source And Gate-drain Parasitic Access Resistances Of GaN-based Electron Devices
23.	Study On High Electric-field And High Temper-Ature Reliability Of AlGaN/GaN HEMTs
24.	Design And Key Technologies Of Novel AlGaN/GaN HEMTs With Electric Field Modulation Effect
25.	Fabrication Of AlGaN/GaN And Low Temperature Au-free Ohmic Contact Electrode And HEMT Device
26.	Reliability Investigations Of Fluorine Plasma Treatment Enhancement-mode AlGaN/GaN HEMTs Under Electrical Stress
27.	The Structural Design And Experimental Research Of Novel AlGaN/GaN HEMTs With Intrinsic GaN Cap Layer
28.	The Optimization Of Structure For AlGaN/GaN HEMT And The Simulation Of Electrical Property
29.	Study On High Electric-field And High Temperature Reliability Of AlGaN/GaN HEMTs
30.	Investigations And Optimization On The Gate Structure And Passivation Technology Of The P-GaN/AlGaN/GaN HEMTs
31.	Study Of Large Signal Model Of AlGaN/GaN High Electron Mobility Transistors
32.	Electro-thermal-mechanical Analysis And Failure Investigation Of AlGaN/GaN HEMTs Under High Power Microwave (HPM) Pulses
33.	Study On Hot-electron-effects And Life-prediction Of GaN-based HEMT Devices
34.	Advanced process development for contacts to aluminum gallium nitride/gallium nitride high electron mobility transistors (HEMTs)
35.	Enhancement/depletion-mode HEMT technology for III-nitride mixed-signal and RF applications
36.	High density plasma etching of wide bandgap semiconductor materials for fabricating novel devices
37.	Characterizing and suppressing DC-to-RF dispersion in aluminum gallium nitride/gallium nitride high electron mobility transistors
38.	Novel dielectric film processing and characterization
39.	Non-Linear MMIC Design using Aluminum Gallium Nitride/Gallium Nitride HEMT Technology
40.	Analysis of failure mechanisms that impact safe operation of ALGaN/GaN HEMTs
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