plasma assisted - Globe Thesis

Keyword [plasma assisted] Result: 1 - 20 \| Page: 1 of 2
1.	Study Of Growth And Doping Of ZnO Films By Plasma Assisted MOCVD
2.	Study On Growth Mechanism Of High Quality AlN By Molecular Beam Epitaxy And Physical Properties Of Related Materials
3.	PIC Simulation And Optimize Design Of Plasma-Assisted Slow-wave Oscillator
4.	Radio Frequency Plasma Assisted Molecular Beam Epitaxy (rf-mbe) Preparation Of High-quality Zno Films
5.	Rf Plasma-assisted Molecular Beam Epitaxial Growth Of High Quality Zno Thin Films
6.	The Preparation, Characterization And Properties Of Thin Films Of Gan And Gan-based Study
7.	Investigation On The Formation Mechanism And Related Physical Properties Of P-type Li-N Dual-doped ZnO Films
8.	Research On The Properties Of ZnO Films And Its P-Type Doping
9.	ZnO Single Crystalline Films Grown By P-MBE And The Investigation On Na Doping
10.	Research On KHz Frenquency Laser Ablation Plasma Assisted Combustiom
11.	Study On Al₂O₃ Nano-barrier Coating By RF-DBD Atmospheric Pressure Plasma Assisted ALD And Pulse CVD
12.	Plasma-assisted Molecular Beam Epitaxy Growth and Properties of Tin Oxide
13.	N-face gallium nitride-based materials and microwave transistors by plasma-assisted molecular beam epitaxy
14.	Growth and characterization of p-type zinc oxide by plasma-assisted molecular beam epitaxy
15.	Growth of non-polar and semi-polar gallium nitride with plasma assisted molecular beam epitaxy: Relatonships between film microstructure, reciprocal lattice and transport properties
16.	Optical characterization and growth investigation of gallium-adsorbate mediated gallium nitride/aluminum nitride quantum dot heterostructures by plasma-assisted molecular beam epitaxy
17.	Development of gallium nitride-based power electronic devices using plasma-assisted molecular beam epitaxy
18.	Growth of (indium,aluminum)gallium nitride alloys by RF-plasma assisted molecular beam epitaxy for application in high electron mobility transistor structures
19.	Growth kinetics and doping of gallium nitride grown by rf-plasma assisted molecular beam epitaxy
20.	Ultrafast all-optical switching based on indium gallium arsenic phosphide grown by helium plasma-assisted molecular beam epitaxy
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