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Keyword [high-k gate dielectrics]
Result: 1 - 20 | Page: 1 of 2
1.
Study On Patterned SOI RF Power Devices
2.
Mobility Modeling And Fabrication Of Si/Ge MOSFET With High-k Gate Dielectrics
3.
Fabrication Of Ge MOS Devices With La-based High-k Gate Dielectrics And Model Of Gate Direct Tunneling Current
4.
Studies On The High-K Gate Dielectrics MOSFET And Related Device Effects
5.
Study On Surface And Interfacial Characteristics Of HfO
2
High-k Gate Dielectric
6.
Research On Low-frequency Noise Model Of Tunneling For Mosfets With High-k Gate Dielectrics
7.
Studies On Preparation And Breakdown Characteristics Of Gd
2
O
3
Doped HfO
2
High-k Gate Dielectrics
8.
Atomic Layer Deposition Of Ultra-thin Tin And Al <sub> 2 </ Sub> O <sub> 3 </ Sub> Film Theory And Based On The Mos Device Of Selenium Nanowires
9.
Study On High - K Gate Dielectric And Diffusion Barrier Layer In Atomic Layer Deposition And Their Characteristics
10.
Investigation On Characteristics Of Atomic Layer Deposited Titanium Dioxide Stack Gate Structure Dielectric
11.
Fabrication,Physical Properties And Performance Investigation Of MOS Devices With Hafnium-based High-K Gate Dielectrics
12.
Fabrication And Synchrotron Radiation Study Of Hf-based High-k Gate Dielectrics On Novel Substrates
13.
Study On The Structural And Annealing Characteristics Of High-k Dielectric Stacks
14.
Interface Control And MOS Device's Performance Optimization Of Hf-based High-k Gate Dielectrics
15.
Research And Fabrication Of SiGe MOS Devices With High K Gate Dielectrics
16.
Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors
17.
Electron tunneling spectroscopy of silicon metal-oxide-semiconductor system with various high-k gate dielectrics
18.
Interaction of metal gates with high -k gate dielectrics in advanced CMOS devices
19.
Reactions of high-k gate dielectrics: Studies in hafnium, zirconium, yttrium, and lanthanum-based dielectrics and in-situ infrared results for hafnium dioxide atomic layer deposition
20.
Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology: Physics, reliability, and process development
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