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Keyword [first principle]
Result: 121 - 140 | Page: 7 of 10
121.
Preparation And Magnetic Exchange Mechanism Of Rare Earth Metal Doped ZnO Thin Films
122.
Low-dimensional Nanoelectronic Device Design Based On Multi-scale Simulation Process
123.
Electrical Transport Properties Of InP Under High Pressure
124.
The First Principle Study On Oxygen Adsorption Based On Gaas Alloy Materials
125.
Research On Sensing Preparation Of ZnO Based Methane Gas Sensor And Its Sensing Mechanism With The First-principle
126.
Structure Prediction And Physical Properties Of ZnS-MgS Semiconductor Alloys And W-B Superhard Compounds
127.
The Regulation Of Stress On The Properties Of Wide-band-gap Two-dimensional Semiconductor Materials
128.
The Study Of Rare Earth Doped GaN And Its Defect Complexes By The First Principle Mathod
129.
Numerical Study On GaAs Based Metal-oxide-semiconductor High Electron Mobility Transistor With High K Oxide Gate Dielectric
130.
Passivation Of Carbon Dimer Defects In Amorphous SiO
2
/4H-SiC（0001） Interface: A First-principle Study
131.
Preparation Of ZnS Nanoparticles And Its First Principle Calculation
132.
Theoretical Study On Electronic Structure And Optical Properties Of Two-dimensional GaAs
133.
First-principle Study Of Electronic Properties Of Doped MgAl
2
O
4
134.
Studies On IR And Raman Spectra Of Bi-O-X(X=S,Se,Te)materials
135.
Studying For The Selector Device Based On Polycrystal Line ZnO Material
136.
The Magnetic And Electrical Properties Of New Diluted Magnetic Semiconductor Based On Ⅰ-Ⅱ-Ⅴ Group
137.
First-principles Investigation Of Electronic Structure Properties Of Two-dimensional Ingan Semiconductor Alloys
138.
First-principles Study On The Physical Properties Of Cubic Ca
2
Ge
139.
Effect Of In Variable Composition On Optical Properties Of GaN-Based Materials
140.
First Principle Calculation Of Ground State Structure And Intrinsic Defect Of Cu
2
ZnSiS
4
Semiconductor
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