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1.
.inas / Gaas Self-organized Quantum Dot Memory,
2.
Reliability studies of Titanium nitride/Hafnium-silicate based gate stacks
3.
Deep-levels in gallium arsenide for device applications
4.
Electrical characterization of defects in n-gallium nitride
5.
Studies toward the development of stable indium phosphide insulated gate field-effect transistors
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