Vapor-phase epitaxy - Globe Thesis

Keyword [Vapor-phase epitaxy] Result: 21 - 35 \| Page: 2 of 2
21.	Development of gallium nitride-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular beam epitaxy
22.	High electron mobility transistor structures in the gallium arsenide and gallium nitride material systems by organometallic vapor phase epitaxy
23.	Metal-organic vapor-phase epitaxy growth, fabrication, and characterization of III-V nitride optoelectronic devices
24.	Structure of nonpolar gallium nitride films grown by hydride vapor phase epitaxy
25.	Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of III-nitride heterostructures for application in electronic devices
26.	Metal organic vapor phase epitaxy growth mechanisms of gallium antimonide and compositional grading in pseudomorphic gallium arsenide antimonide films
27.	Development of surface micromachined Aluminum Nitride air-bridges for piezoelectric MEMS/NEMS applications by Metal Organic Vapor Phase Epitaxy techniques
28.	Growth and characterization of freestanding gallium nitride substrates by the hydride-metalorganic vapor phase epitaxy technique
29.	Growth via low pressure metalorganic vapor phase epitaxy and surface characterization of gallium nitride and indium gallium nitride thin films
30.	Shadow masked organometallic vapor phase epitaxy for advanced micro-optical structures
31.	Computational studies of the metalorganic vapor phase epitaxy (MOVPE) of III-V compound semiconductors
32.	Metalorganic vapor phase epitaxy of II-VI compound semiconductors and diluted magnetic semiconductors
33.	The effect of substrate misorientation on the homoepitaxial growth of cadmium telluride by organometallic vapor phase epitaxy
34.	Defect Analysis in III-V Semiconductor Thin Films Grown by Hydride Vapor Phase Epitaxy
35.	Research And Design Of Control System For 2-6 Inch Vertical Hydride Vapor Phase Epitaxy(HVPE)Equipment
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