Strained - Globe Thesis

Keyword [Strained] Result: 181 - 200 \| Page: 10 of 10
181.	Scanning probe microscopy studies of the highly strained epitaxy of indium arsenide on gallium arsenide(001) and scanning probe based imaging and manipulation of nanoscale three-dimensional objects
182.	The design and characterization of strained-layer quantum well infrared photodetectors
183.	Strained-layer indium gallium arsenide-gallium arsenide-aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition
184.	Polarization and charge limit studies of strained GaAs photocathodes
185.	Growth of InAs/GaAs short-period strained-layer superlattices by molecular beam epitaxy
186.	Double-doped double-strained modulation-doped field effect transistor: 3D-SMODFET
187.	Design and demonstration of InAs/GaInSb strained-layer superlattices optimized for long-wavelength infrared detectors
188.	Design, analysis and fabrication technology for 1.55 micron strained and strain-compensated multiple quantum well single frequency lasers
189.	Characterization of strained quantum well tunneling injection and separate confinement heterostructure lasers
190.	A unified picture of threshold behaviour in strained quantum well lasers
191.	Optical properties of III-V and II-VI strained semiconductor heterostructures under pressure
192.	Design of vertical cavity surface-emitting lasers with strained and unstrained quantum well active regions
193.	Studies on lattice-mismatched III-V compound semiconductors and pseudomorphic strained resonant tunneling diodes
194.	Pressure effects on strained-layer heterojunctions
195.	Optical studies of strained-layer-superlattices and diluted magnetic semiconductors
196.	Indium gallium arsenide strained -layer single quantum well lasers
197.	Molecular beam epitaxy of strained heterostructures and their application to optoelectronic devices
198.	Strained indium(0.52)aluminum(0.48)arsenide/indium(x)gallium(1-x)arsenide (x greater than 0.53) high electron mobility transistors (HEMT's) for microwave/millimeter -wave applications
199.	Strained-Germanium Nanomembranes for Potential Direct-Gap Luminescenc
200.	Defect investigations in InAs/GaSb type-II strained layer superlattice
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