Silicon-germanium - Globe Thesis

Keyword [Silicon-germanium] Result: 21 - 40 \| Page: 2 of 8
21.	Optimixation And Design Of Si-based Ge MSM Photodetectors
22.	Ordered Macroporous Silicon-germanium Fabricated By Electrodeposition In Ionic Liquid
23.	Technology Research On Silicon Germanium Heterojunction Bipolar Transistors And Low Noise Amplifiers
24.	Total Ionizing Radiation Effect Of Typical SiGe HBTs
25.	Magnetoresistance Properties And Applications Of Semiconductor Silicon And Germanium
26.	W-band Amplifier Research And Design
27.	Operation of inverse mode silicon-germanium HBTs and ultra-scaled CMOS devices in extreme environments
28.	Millimeter-wave high voltage power amplifier implementation in silicon germanium
29.	Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
30.	Silicon germanium HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers
31.	Silicon germanium BiCMOS phased-array antenna front-ends for extreme environment applications
32.	Electronic defects of III-V compound semiconductor materials grown on metamorphic silicon-germanium substrates for photovoltaic applications
33.	60 Gs/s analog-to-digital conversion in silicon-germanium HBT technology
34.	Silicon germanium high speed crossbar switch for digital signal router and phased array antenna systems
35.	Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
36.	Silicon and silicon-germanium epitaxy for quantum dot device fabrications towards an electron spin-based quantum computer
37.	Low resistivity contact methodologies for silicon, silicon germanium and silicon carbon source/drain junctions of nanoscale CMOS integrated circuits
38.	Operating voltage constraints and dynamic range in advanced silicon-germanium HBTS for high-frequency transceivers
39.	Silicon germanium integrated circuits for millimeter-wave imaging and phased arrays
40.	Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits
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