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Keyword [SiO2/SiC interface]
Result: 1 - 6 | Page: 1 of 1
1.
Electrical Properties Of SiO
2
/SiC Interface Treated By Nitrogen And Hydrogen Plasma
2.
First-principle-based Investigation Of SiO
2
/SiC Dangling Bonds
3.
SiO
2
/SiC Interface Transition Region And Plasma Passivation Processes
4.
Study On Properties Of Nitrided SiC MOS Interface By Gray-Brown Method
5.
Improvement Of Interfacial Electrical Properties Of SiC MOS Devices By ECR Plasma Pretreatments Of SiC Surface
6.
Investigation Of Electrical Properties Of SiC MOS Interface Modified By NH
3
Plasma Post-oxidation Annealing
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