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Keyword [SiC/SiO2 interface]
Result: 1 - 6 | Page: 1 of 1
1.
First-principle Study On The Formation Mechanism Of SiC/SiO
2
Interfaces And Interface Defects
2.
The Research On The Properties Of SiC MOS Interface By Conductance Method
3.
Research On The Correlation Between Charge Carriers Trapping Near The SiC-SiO
2
Interface And 1/f Noise In 4H-SiC MOSFETs
4.
A Study On The Tddb Characteristics Of Gate Oxide Layer In 4H-SiC MOS Devices
5.
First-principles Investigation On The Defects At SiC/SiO
2
Interface
6.
Reliability Mechanism Of SiC Power MOSFET Based On Low-frequency Noise Theory
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