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Keyword [Phase epitaxy]
Result: 21 - 40 | Page: 2 of 3
21. The Design And Optimization Of HVPE Reactor Based On The Numerical Simulation
22. The Numerical Simulation Of GaN Growth By Hydride Vapor Phase Epitaxy
23. Growth Of High Quality GaN Single Crystal By HVPE
24. Research On The Epitaxial Growth And Characterization Of Non-Polar And Semi-Polar Gan-Based Nitrides
25. Research On Low Loss Microwave Monocrystal Thick Films And Their Application In Planar High Q Factor Resonators
26. LPE Growth And Device Fabrication Of InAsSb Medium-wave Infrared Detector At Room Temperature
27. Fundamental Research On Heavy Matel/Magnetic Insulators Heterojunction Films And Anomalous Hall Devices
28. Simulation Study On HVPE Growth Of Ga2O3 Thin Films
29. Research And Application On Control System Of Large-Scale Hydride Vapor Phase Epitaxy (HVPE) Equipment
30. Hydride Vapor Phase Epitaxy Heteroepitaxy Of Metastable Phase ?-Ga2O3
31. Growth And Characterization Of Ga2O3 Thin Films By Halide Vapor Phase Epitaxy
32. Synthesis of narrow band-gap III-V semiconductors using metal-organic vapor phase epitaxy
33. Indium nitride growth by metal-organic vapor phase epitaxy
34. Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices
35. Development of gallium nitride-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular beam epitaxy
36. High electron mobility transistor structures in the gallium arsenide and gallium nitride material systems by organometallic vapor phase epitaxy
37. Metal-organic vapor-phase epitaxy growth, fabrication, and characterization of III-V nitride optoelectronic devices
38. Direct-write e-beam sub-micron domain engineering in lithium niobate thin films grown by liquid phase epitaxy
39. Structure of nonpolar gallium nitride films grown by hydride vapor phase epitaxy
40. Metalorganic vapor phase epitaxy (MOVPE) growth and characterization of III-nitride heterostructures for application in electronic devices
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