Keyword [Oxide Semiconductor] Result: 161 - 180 | Page: 9 of 10 161.  The Sensing Properties Of Spinel Oxide Semiconductor To Acetone And CO Gases 162.  Studies On The Electrical Characteristics Of ALD-Grown Hafnium Oxide Thin-Film Devices 163.  Study On Gas Sensor Based On P-type Metal Oxide Semiconductor Hetero-composite Structure 164.  Crystallization Process And Stability Of P-type SnO In Thermal Annealing 165.  Study On The Growth And Utilization Of Oxide Semiconductor Films Based On Protein Substrate 166.  A framework for determining the reliability of nanoscale metallic oxide semiconductor (MOS) devices 167.  Fabrication and characterization of polymer based metal-oxide-semiconductor and non-volatile memory devices 168.  Characterization and analysis of nanowire metal oxide semiconductor field effect transistors 169.  Modeling and characterization of gallium nitride based metal-oxide-semiconductor heterostructure field-effect transistors for RF power amplifiers 170.  Electron tunneling spectroscopy of silicon metal-oxide-semiconductor system with various high-k gate dielectrics 171.  Bulk gallium nitride based electronic devices: Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors 172.  Gallium Oxide Metal Oxide Semiconductor Field Effect Transistor Analytical Modeling and Power Transistor Design Trade 173.  Growth, characterization and device processing of gallium nitride metal oxide semiconductor field effect transistor (MOSFET) structures 174.  Complementary metal oxide semiconductor compatible silicon-on-insulator optical rib waveguides with local oxidation of silicon isolation 175.  Metal-oxide-semiconductor structures on gallium arsenide and gallium nitride 176.  Complementary orthogonal stacked metal oxide semiconductor: A novel nanoscale complementary metal oxide semiconductor architecture 177.  Hot carrier modeling in metal-oxide-semiconductor devices using the convective scheme 178.  Characterization of silicon carbide junction field effect transistors and metal oxide semiconductor field effect transistors 179.  Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition 180.  Defect Analysis of the Indium-Gallium-Zinc-Oxygen System for Transparent Oxide Semiconductor Applications   <<First  <Prev  Next>  Last>>  Jump to

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