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Keyword [Nitride-based]
Result: 81 - 100 | Page: 5 of 6
81.
Aluminum indium gallium nitride-based ultra-violet light emitting diodes: Microscopic physics of device operation
82.
Photoluminescence spectroscopy of gallium nitride based materials and light emitting diodes
83.
Ohmic contacts to N-type gallium nitride based semiconductors
84.
Polarization Engineering in Gallium-Nitride-based Light-Emitting Diodes
85.
Development of ultraviolet nitride-based light emitting diodes
86.
Growth, fabrication and characterization of gallium nitride based bipolar transistors
87.
500 nm Semipolar Gallium Nitride-Based Laser Diodes
88.
Optimization of the High Frequency Performance of N-polar Nitride-Based Transistors
89.
Gallium nitride-based and high-speed metal-semiconductor-metal photodetector: Growth and device structures for integration
90.
Design and fabrication of gallium nitride-based heterojunction bipolar transistors
91.
Gallium nitride-based micro-opto-electro-mechanical systems
92.
Noise in gallium nitride-based quantum well structures used for nanometer devices in the frequency range 1 Hz--3 Mhz and temperature range 77K--324K
93.
Development of growth and fabrication technology for gallium nitride-based vertical cavity surface emitting lasers
94.
Hetero- and homo-epitaxial growth of III-nitride based junctions and devices by molecular beam epitaxy
95.
Large-signal modeling of gallium nitride-based microwave power transistors
96.
Effect of current crowding and device structure on operation of gallium nitride-based light-emitting diodes
97.
Low frequency noise in gallium nitride based advanced electronic devices
98.
Aluminum gallium nitride-based solar -blind ultraviolet photodetectors
99.
Improved characteristics of indium gallium nitride-based laser diodes
100.
Gallium nitride-based electronic devices
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