Nitride-based - Globe Thesis

Keyword [Nitride-based] Result: 61 - 80 \| Page: 4 of 6
61.	Peak radiative efficiency and electron-drift-induced efficiency droop in iii-v nitride-based light-emitting diodes
62.	Gallium nitride-based heterojunction field-effect transistors for high-power high-frequency MMIC power amplifiers
63.	Nonpolar Gallium Nitride-based VCSELs
64.	Optical studies of gallium nitride-based light emitting structures
65.	Development and fabrication of gallium nitride-based microdisk lasers using photoelectrochemical etching
66.	Novel Silicon Nitride-Based Charge Trapping Gate Power Semiconductor Devices
67.	Temperature dependent characteristics of Gallium nitride/Gallium-Indium nitride based light emitting diodes
68.	Transmission electron microscopy: A guide to improved semiconductor structures, gallium nitride-based in particular
69.	Proton irradiation effects on gallium nitride-based devices
70.	Non-Ideal Properties of Gallium Nitride Based Light-Emitting Diodes
71.	Light extraction from gallium nitride-based light emitting diodes with a noninvasive two-dimensional photonic crystal
72.	Gallium nitride-based blue laser diodes
73.	Design, Growth and Fabrication of Nitride-based Semipolar (2021) Laser Diodes
74.	Thermal study of a gallium nitride-based HEMT
75.	Nonpolar m-plane gallium Nitride-based Laser Diodes in the Blue Spectrum
76.	Gallium nitride-based HEMTs for microwave power and noise: Physics and application
77.	Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation
78.	Development and application of electron beam induced current and cathodoluminescence analytical techniques for characterization of gallium nitride-based devices
79.	Development of gallium nitride based dilute magnetic semiconductors for magneto-optical applications
80.	Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes
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