N-polar - Globe Thesis - Globe Thesis

Keyword [N-polar] Result: 1 - 20 \| Page: 1 of 2
1.	Study On Growth And Property Of N-polar GaN Material By MOCVD
2.	The Basic Study On GaN/AlGaN Heterojunction In N-polar GaN Based HEMT
3.	Study On The Growth Of N-polar Ⅲ-nitrides Films By MOCVD And Light Emitting Diodes
4.	Study On N-polar N-type Ohmic Contact And Aging Characteristics Of GaN-based LED
5.	A Study And Optimization Of N-polar GaN Materials
6.	Study On The Growth Of Polarity-Controlled GaN And ZnO Films By MOCVD And The ZnO-GaN Light Emitting Devices
7.	Simulation Of The Scaling-down Laws Of N-face GaN HEMT And Fin-HEMTs
8.	Structural Optimization On N-polar AlGaN/GaN Resonant Tunneling Device
9.	Study On The MOCVD Growth Of The N-polar GaN Films On Sapphire Substrates And The Properties Of Its Related Light Emitting Devices
10.	Research On The Epitaxial Growth And Characteristics Of N-polar AlGaN Films
11.	Growth of nitrogen-polar gallium nitride-based materials and high electron mobility transistors by metal organic chemical vapor deposition
12.	Heteroepitaxy of nitrogen-polar, nonpolar, and semipolar gallium nitride by MOCVD
13.	MOCVD growth and study of thin films of indium nitrid
14.	Advanced polarization engineering for gallium nitride-based transistors
15.	Optimization of the High Frequency Performance of N-polar Nitride-Based Transistors
16.	New Aspect in MOCVD of Metal- And N-Polar (Al,Ga)N and Its Device Application
17.	InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations
18.	Characterization and Extended Defect Control in III-Nitrides
19.	Simulation Of N-polar AlGaN-based Deep-ultraviolet LED Device
20.	Simulation Study Of N-polar GaN-based HEMTs
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