Molecular-beam - Globe Thesis

Keyword [Molecular-beam] Result: 141 - 160 \| Page: 8 of 10
141.	Growth of 1.5 micron gallium indium nitride arsenide antimonide vertical cavity surface emitting lasers by molecular beam epitaxy
142.	Development of epi-ready bromine ion-beam-assisted etched gallium antimonide substrates for gallium antimonide molecular beam epitaxy
143.	Molecular beam epitaxy: A thermomechanical treatment
144.	A new crossed molecular beam apparatus for the study of the Cl + O3 reaction probed via direct absorption of millimeter/submillimeter-waves
145.	High quality indium arsenide and related alloys grown on gallium phosphide substrates using a novel liquid phase-molecular beam epitaxy technique
146.	Process modeling of indium arsenide/aluminum antimonide materials for high electron mobility transistors grown by molecular beam epitaxy
147.	Electron transport in mesoscopic devices fabricated from indium antimonide/aluminum indium antimonide heterostructures grown by molecular beam epitaxy
148.	Conversion of a Molecular Beam Epitaxy System for the Growth of 6.1 Angstrom Semiconductors
149.	Axial molecular beam tunable diode laser spectrometer
150.	Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
151.	Molecular beam epitaxy and characterization of gallium arsenic nitride and its application to quantum dot cascade light sources
152.	Evolution of patterned gallium arsenide (001) surface subjected to molecular beam epitaxy growth
153.	Growth of III-nitrides by molecular beam epitaxy for heterojunction field effect transistors and optoelectronic applications
154.	Indium arsenide-based bipolar transistors grown by molecular beam epitaxy
155.	Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy
156.	Studies of arsenic incorporation and P-type doping in epitaxial mercury cadmium telluride thin films grown by molecular beam epitaxy
157.	Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy
158.	Molecular beam epitaxy grown III-nitride materials for high-power and high-temperature applications: Impact of nucleation kinetics on material and device structure quality
159.	Mechanisms and reaction paths for surface roughening and epitaxial breakdown during molecular beam epitaxy: Fundamental limits
160.	Molecular beam epitaxial growth of complex novel oxides
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