Molecular-beam - Globe Thesis

Keyword [Molecular-beam] Result: 121 - 140 \| Page: 7 of 10
121.	Growth of non-polar and semi-polar gallium nitride with plasma assisted molecular beam epitaxy: Relatonships between film microstructure, reciprocal lattice and transport properties
122.	Development of gallium nitride-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular beam epitaxy
123.	Real-time synchrotron x-ray studies of III-V nitride growth
124.	Optical characterization and growth investigation of gallium-adsorbate mediated gallium nitride/aluminum nitride quantum dot heterostructures by plasma-assisted molecular beam epitaxy
125.	Effect of plasma dynamics on gallium nitride nanorod and growth by molecular beam epitaxy
126.	Gas-source molecular beam epitaxial growth and characterization of the (aluminum,indium,gallium)nitride phosphide/gallium phosphide material system and its applications to light-emitting diodes
127.	Development of Hg1-xCd xSe for 3rd Generation Focal Plane Arrays using Molecular Beam Epitaxy
128.	Molecular beam epitaxy of narrow gap quantum wells: Indium antimonide, Indium-gallium-arsenic and elemental antimony
129.	Development of gallium nitride-based power electronic devices using plasma-assisted molecular beam epitaxy
130.	Molecular beam epitaxy of indium phosphide-based alloys for long-wavelength vertical cavity lasers
131.	Growth of multiferroic oxides by molecular-beam epitaxy
132.	III-nitride ultraviolet emitters produced by molecular beam epitaxy
133.	Indium arsenide high-velocity transistor: Design, molecular beam epitaxial growth, and device fabrication
134.	Molecular beam epitaxy growth of aluminum gallium nitride/gallium nitride quantum wells and investigation of excitonic and intersubband transitions
135.	Molecular beam epitaxy of novel semiconductor materials for microelectronic and optoelectronic device applications
136.	Characterization of Polar, Semi-Polar, and Non-Polar p-n Homo and Hetero-junctions grown by Ammonia Molecular Beam Epitaxy
137.	Fabrication and Characterization of Optoelectronics Devices Based on III-V Materials for Infrared Applications by Molecular Beam Epitaxy
138.	Molecular beam epitaxy growth and characterization of wide bandgap zinc-magnesium-selenium semiconductor materials and heterostructures for intersubband devices
139.	Microstructural and optical properties of self-assembled quantum dots for optical devices grown by molecular beam epitaxy
140.	Growth of (indium,aluminum)gallium nitride alloys by RF-plasma assisted molecular beam epitaxy for application in high electron mobility transistor structures
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