Molecular-beam - Globe Thesis

Keyword [Molecular-beam] Result: 101 - 120 \| Page: 6 of 10
101.	Molecular Beam Epitaxy Growth And Device Research Of Middle Wave Quantum Well Infrared Detector (QWIP) Materials
102.	Study On The Photoelectric Characteristics Of GaAs/GaAsSb Core-shell Nanostructures
103.	Molecular Beam Epitaxy Growth Of GaAs Based InSb And InAsSb Thin Film
104.	Erasable High Mobility Two-dimensional Electron Gas At The Oxide Interface
105.	Study Of The Design,Fabrication And Simulation Of Silicon-based Nanocolumn GaN-LED
106.	InGaAs APD Infrared Detector Structure Design And Performance Research
107.	Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy
108.	Plasma-assisted Molecular Beam Epitaxy Growth and Properties of Tin Oxide
109.	Characteristics of an Indium Asenide-based nBn photodetectors grown by molecular beam epitaxy
110.	N-face gallium nitride-based materials and microwave transistors by plasma-assisted molecular beam epitaxy
111.	Growth of 1.5-1.55 micron gallium indium nitrogen arsenic antimonide lasers by molecular beam epitaxy
112.	Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs
113.	Investigation of ohmic contacts for gallium nitride-based power electronic devices using molecular beam epitaxy
114.	Molecular beam epitaxy for germanium nanoheteroepitaxial growth and high mobility device applications
115.	Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors
116.	Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy
117.	Novel semiconductor infrared lasers based on III-V materials by molecular beam epitaxy
118.	Growth and characterization of p-type zinc oxide by plasma-assisted molecular beam epitaxy
119.	Phosphorus incorporation during silicon(001):phosphorus gas-source molecular beam epitaxy: Effects on film growth kinetics, surface morphology, and the self-organization of germanium quantum dot overlays
120.	Effects of plasma species during the molecular-beam epitaxy growth of dilute nitride semiconductors for infrared optoelectronic device applications
<<First <Prev Next> Last>> Jump to