Molecular beam epitaxy - Globe Thesis

Keyword [Molecular beam epitaxy] Result: 161 - 180 \| Page: 9 of 10
161.	Shadow mask selective area molecular beam epitaxy for applications in device processing and integration
162.	Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices
163.	Ultrafast all-optical switching based on indium gallium arsenic phosphide grown by helium plasma-assisted molecular beam epitaxy
164.	Silicon (011) and silicon germanium (011) gas-source molecular beam epitaxy: Surface reconstructions, growth kinetics, and germanium segregation
165.	Ultra-high B doping during Si(1-x)Ge(x)(001) gas-source molecular-beam epitaxy: A mechanistic study of layer growth kinetics, dopant incorporation, electrical activation, and carrier transport
166.	Molecular beam epitaxy of quantum dots for high-speed photodetectors
167.	Gas source molecular beam epitaxy of lasers and detectors using strained layers of indium(1-x)gallium(x)arsenide(y)phosphide(1-y)
168.	Intelligent monitoring and control system during molecular beam epitaxy growth
169.	Modeling and optimization of molecular beam epitaxy for III-V compound semiconductor growth
170.	Growth and evaluation of gallium nitride on silicon(111) substrates using electron cyclotron resonance plasma-assisted molecular beam epitaxy
171.	InP/InGaAs heterojunction bipolar transistors and field-effect transistors grown by gas -source molecular beam epitaxy
172.	Fabrication of self-assembled silicon germanium quantum nanostructures on silicon surfaces by molecular beam epitaxy
173.	H-mediated film growth and dopant incorporation kinetics during silicon germanium(001):boron gas-source molecular beam epitaxy
174.	Growth of wurtzite gallium nitride epitaxial films on sapphire substrate by reactive molecular beam epitaxy and material characterization
175.	Growth by molecular beam epitaxy and characterization of Al(x)Ga(1-x)N alloys and heterostructures
176.	Nonlinear modeling and control design for substrate temperature in molecular beam epitaxy
177.	Normal incidence devices based on antimonide materials grown by molecular beam epitaxy
178.	Growth and characterization of high-speed C-doped base InP/InGaAs heterojunction bipolar transistors using metalorganic molecular beam epitaxy
179.	Molecular beam epitaxy growth and characterization of two-six materials for visible semiconductor lasers
180.	Growth of InAs/GaAs short-period strained-layer superlattices by molecular beam epitaxy
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