Molecular beam epitaxial growth - Globe Thesis

Keyword [Molecular beam epitaxial growth] Result: 1 - 18 \| Page: 1 of 1
1.	Inp-based And Phosphorus-containing Heterojunction Bipolar Transistor Materials, Structural Design And The Gas Source Molecular Beam Epitaxial Growth
2.	Er <sub> 2 </ Sub> O <sub> 3 </ Sub> High-k Gate Dielectric Materials, Molecular Beam Epitaxial Growth, Structure And Physical Properties
3.	Molecular Beam Epitaxial Growth And Characterization Of InN Films And Nanostructures
4.	Effect Of Reconstructures On Molecular Beam Epitaxial Growth Of GaAs
5.	Rf Plasma-assisted Molecular Beam Epitaxial Growth Of High Quality Zno Thin Films
6.	Molecular Beam Epitaxial Growth And Characterization Of High-Al Composition AlGaN Film
7.	Molecular Beam Epitaxial Growth And Mechanism Of Cadmium Telluride Single Crystalline Films On Oxide Substrate
8.	Molecular Beam Epitaxial Growth Of InAs/AlSb 2DEG Structure
9.	Molecular Beam Epitaxial Growth Of AlGaN/GaN Heteroj Unctions And Characterization
10.	Gas-source molecular beam epitaxial growth and characterization of the (aluminum,indium,gallium)nitride phosphide/gallium phosphide material system and its applications to light-emitting diodes
11.	Indium arsenide high-velocity transistor: Design, molecular beam epitaxial growth, and device fabrication
12.	Molecular beam epitaxial growth of complex novel oxides
13.	Molecular-beam-epitaxial growth, properties, and device applications of thulium (phosphide, arsenide) alloys on gallium arsenide
14.	Molecular beam epitaxial growth and fabrication of microwave and photonic devices for hybrid integration on alternative substrates
15.	Molecular beam epitaxial growth and characterization of gallium antimonide, and its use in gallium antimonide/aluminum antimonide heterostructures
16.	Molecular-beam epitaxial growth and characterization of aluminum gallium arsenide/indium gallium arsenide single quantum-well modulation-doped field-effect transistor structures
17.	THE MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY GALLIUM-ARSENIDE - ALUMINUM-GALLIUM - ARSENIDE HETEROSTRUCTURES FOR MICROWAVE DEVICE APPLICATIONS (QUANTUM WELLS, IMPURITY, PHOTOLUMINESCENCE, MODULATION DOPING)
18.	Research On Photoelectric Regulation And Performance Optimization Of Long/Very Long Wavelength Infrared Quantum Well Photodetectors
<<First <Prev Next> Last>> Jump to