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Keyword [MBE regrowth]
Result: 1 - 2 | Page: 1 of 1
1.
Indium gallium arsenide MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth
2.
Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics
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