Ion-implanted - Globe Thesis

Keyword [Ion-implanted] Result: 21 - 40 \| Page: 2 of 3
21.	Optical Properties And The Range Distribution Of Rare Earth Ions Which Were Implanted Into ZnO Thin Optical Waveguide Films
22.	Defect And Magnetism Properties In Ion-implanted Semiconductors Studied By Positron Annihilation Technique
23.	Photoluminescence Spectroscopy Study Of Impurities And Defects In Ion-implanted ZnO Single Crystal
24.	Study Of Nanometric Cutting Mechanism Of Ion Implanted 6H Silicon Carbide
25.	Study On P-type Conduction Mechanism And Photoelectric Characteristics Of N-Ion Implanted ZnO
26.	The fabrication and characterization of terahertz wave photoconductive dipole antennas on oxygen ion implanted gallium arsenide
27.	Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors
28.	Fabrication and deep level characterization of ion-implanted silicon carbide devices
29.	Ion implanted quantum well saturable absorbers for high bit rate optical communications
30.	Nonlinear optical properties of novel nanostructured ion implanted and laser ablated silicon using femtosecond pulse excitation
31.	Loop nucleation and stress effects in ion-implanted silicon
32.	Development of direct ion-implanted gallium arsenide MESFET and low-actuation-voltage RF MEM switches
33.	Ion-implanted GaAs MESFET MMICs for 77-GHz automotive radar
34.	Thermal x-ray detectors for astrophysical applications: Excess noise measurements and characterization of the ion implanted silicon thermistor
35.	Silicon metal-semiconductor-metal photodetectors: Ion-implanted high-speed near-infrared photodiodes and position-sensitive photodetectors
36.	Millimeter-wave low-noise amplifiers using cost-effective ion-implanted MESFETs and coplanar transmission lines
37.	Characterization and application of MeV ion-implanted layers in III-V compound semiconductors
38.	LASER PROCESSING OF HIGH DOSE ION IMPLANTED SILICON: THE SOLID PHASE REGIME
39.	LASER ANNEALING OF ION IMPLANTED SILICON
40.	193nm excimer laser processing wide band-gap semiconductor material
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