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Keyword [Inas]
Result: 81 - 100 | Page: 5 of 6
81.
Indium arsenide high-velocity transistor: Design, molecular beam epitaxial growth, and device fabrication
82.
Growth dynamics and laser applications of indium arsenide quantum dots in gallium arsenide/aluminum gallium arsenide structures
83.
High quality indium arsenide and related alloys grown on gallium phosphide substrates using a novel liquid phase-molecular beam epitaxy technique
84.
Indium arsenide-based bipolar transistors grown by molecular beam epitaxy
85.
InAsSb/InAs Strain Balanced Superlattices for Photodetector Applications
86.
A study on indium arsenide-based Schottky barrier diodes
87.
The indium arsenide/indium antimonide-based and gallium arsenide/aluminum gallium arsenide-based heterostructure field-effect transistors grown on hetero-substrates
88.
Investigation of Infrared Detectors Based on the Gallium-free Superlattice
89.
Investigation of new devices and characterization techniques in the III-V semiconductor system
90.
Unstrained and strained semiconductor nanostructure fabrication via molecular beam epitaxical growth on non-planar patterned gallium arsenide(001) substrates
91.
Nextnano simulation of InAs/GaAs quantum dots for infrared photodetection applications
92.
Physics of novel InAs/AlSb/GaSb resonant interband tunneling structures
93.
Growth of InAs/GaAs short-period strained-layer superlattices by molecular beam epitaxy
94.
Design and demonstration of InAs/GaInSb strained-layer superlattices optimized for long-wavelength infrared detectors
95.
Type-II InAs/GaSb Superlattices Infrared Photodetector Optimization and Gated Photodetector Array Realization
96.
Surface Chemistry and Interface Evolution during the Atomic Layer Deposition of High-k Metal Oxides on InAs(100) and GaAs(100) Surfaces
97.
Study of Structural, Optical and Electrical Properties of InAs/InAsSb Superlattices Using Multiple Characterization Techniques
98.
III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Application
99.
Defect investigations in InAs/GaSb type-II strained layer superlattice
100.
Design And Simulation Of NBn Structure T2SL Infrared Detector
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