Iii-nitride - Globe Thesis

Keyword [Iii-nitride] Result: 1 - 20 \| Page: 1 of 3
1.	Modification Of Polarization Field In III-nitride Semiconductors
2.	Study On Growth And Characterization Of Ⅲ-Nitride Semiconductor Epitaxial Films
3.	Testing And Characterization Of GaN/AlGaN Quantum Well Infrared Detectors
4.	Study Of The Polarization Characteristics Of Wide Bandgap Group III Nitride
5.	Investigation Of The Interface Between LPCVD-SiN_x Gate Dielectric And Iii-nitride For AlGaN/GaN MIS-HEMTs
6.	Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy
7.	High-performance gateless III-nitride microwave switches
8.	Reduced dislocation engineering and enhanced light extraction efficiency of III-nitride light emitting diodes
9.	Improvements to III-nitride light-emitting diodes through characterization and material growth
10.	High frequency MIS-based III-nitride transistor and integrated bio-sensor technology
11.	Development of III-nitride non polar LEDs and self aligned laser structure
12.	Improvement of III-nitride visible and ultraviolet light-emitting diode performance, including extraction efficiency, electrical efficiency, thermal management and efficiency maintenance at high current densities
13.	Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs
14.	Enhancement/depletion-mode HEMT technology for III-nitride mixed-signal and RF applications
15.	High power III-nitride transistors for energy conversion
16.	III-Nitride based superlattice sub-millimeter wave source
17.	Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD
18.	III-Nitride MOSH based RF switches
19.	Improved quality non-polar III-nitride heteroepitaxial films and devices
20.	Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices
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