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Keyword [High-k gate]
Result: 61 - 80 | Page: 4 of 6
61. Mobility Model And Surface Passivation Of GeOI MOS Devices With High-k Gate Dielectric
62. Threshold Voltage Model And Interfacial Characteristics Of GaAs MOS Devices With High-k Gate Dielectric
63. Simulation Onelectrical Characteristics And Investigation Of Interface Properties Of High-k Gate Dielectric Ge MOS Device
64. Based On Atomic Layer Deposition Of High-k Gate Dielectric Material Characteristics Of The Device
65. Study On The Characteristics Of Nd2O3-doped HfO2 High-k Gate Dielectric Films Prepared By Atomic Layer Deposition
66. Study On Fabrication And Properties Of ZnO Thin-film Transistors With High-k Gate Dielectric
67. Study On The Structural And Annealing Characteristics Of High-k Dielectric Stacks
68. Eot Reduction Method For High-k Metal Gate Structure PMOSFETs At 14nm Nodes
69. Interface Control And MOS Device's Performance Optimization Of Hf-based High-k Gate Dielectrics
70. On The Reliability Issues Of High-k Gate Dielectric In Nanoscale Devices
71. Optimization Of Material And Processing For Interface Passivation Layer Of Ge MOS Devices With High-k Gate Dielectric
72. Improved Interfacial Characteristics Of GaAs MOS Devices By Using NH3-plasma Treated Interfacial Passivation Layer
73. The Study On The Key Process And Interface Characteristics Of Ga2O3-based MIS Structure
74. Threshold Voltage Model Of Ge MOS Devices And Study Of ZrLaON Gate Dielectric
75. Simulation On Electrical Characteristics Of In InGaAs MOSFET And Interface Properties Of GaAs-La-Based High-k
76. Research And Fabrication Of SiGe MOS Devices With High K Gate Dielectrics
77. Based On 28nm High-K Gate Oxygen Medium SOI FinFet Single Event Effect Research
78. Fabrication Of MoS2 Transistor By Exfoliation And CVD Methods And Device Simulation
79. Side Trench Field Plate Of SOI Lateral Power Devices
80. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors
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