High electron mobility transistors - Globe Thesis

Keyword [High electron mobility transistors] Result: 41 - 60 \| Page: 3 of 4
41.	Proton irradiation effects on gallium nitride-based devices
42.	TEM Characterization of Electrically Stressed High Electron Mobility Transistors
43.	Simulation of high electron mobility transistors using the spectral element method
44.	Process modeling of indium arsenide/aluminum antimonide materials for high electron mobility transistors grown by molecular beam epitaxy
45.	Metalorganic chemical vapor deposition of gallium nitride on silicon carbide for high electron mobility transistors
46.	GaAs-based metamorphic high electron mobility transistors with high indium mole fraction quantum well channels
47.	Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors
48.	Characterizing and suppressing DC-to-RF dispersion in aluminum gallium nitride/gallium nitride high electron mobility transistors
49.	Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
50.	Characterization of aluminum gallium nitride/gallium nitride high electron mobility transistors and their application in microwave push-pull amplifiers
51.	MOCVD growth technologies for applications in aluminum gallium nitride/gallium nitride high electron mobility transistors
52.	Monolithic integration of long wavelength photodetectors and high electron mobility transistors on metamorphic gallium arsenide substrates
53.	Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors through Monte Carlo Particle-based Device Simulations
54.	Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors
55.	The monolithic integration of enhancement- and depletion-mode high electron mobility transistors for low-power and high-speed circuit applications in the lattice-matched indium phosphide material system
56.	Material, physics, device physics, and technology of high-power pseudomorphic AlGaAs/InGaAs high electron mobility transistors
57.	Indium phosphide-channel high electron mobility transistors for low-temperature power electronics
58.	Design and technology of millimeter-wave indium aluminum arsenide/indium gallium arsenide high electron mobility transistors (HEMT's) and monolithic integrated circuits
59.	Strained indium(0.52)aluminum(0.48)arsenide/indium(x)gallium(1-x)arsenide (x greater than 0.53) high electron mobility transistors (HEMT's) for microwave/millimeter -wave applications
60.	Fabrication and characterization of GaN-based high electron mobility transistors
<<First <Prev Next> Last>> Jump to