Font Size: a A A
Keyword [High electron mobility]
Result: 161 - 179 | Page: 9 of 9
161. Research On Au-free Gate Process Of GaN Based High Electron Mobility Transistors
162. Research On Device Physics And Modeling Of GaN-on-Si High-electron Mobility Transistors
163. The Design Of GaN Power Amplifier For 5G Mobile Communication
164. Investigation Of Terahertz Wavefront Modulation Device Based On Complex Functional Sequence Metasurface
165. Research On GaN Quasi-Vertical Schottky Barrier Diodes And Planar Complementary Logic Inverters
166. Study On The Channel Engineering And Key Device Technology Of Group Ⅲ-Nitrides For 5G Communication Applications
167. Research On Key Physical Problems Of GaN-based Schottky Devices
168. Novel Structure Design And Mechanism Research Of High-voltage GaN HEMT
169. Novel Structure And Mechanism Research Of Gallium Nitride Power Device For High Voltage And Low Loss
170. Study On Strongly Polarized Nitride High-efficiency Millimeter Wave Power Devices
171. Study On Gallium Nitride Enhancement-mode Radio Frequency Power Devices
172. Research On GaN-based Harmonic Enhanced High Electron Mobility Transistor
173. Investigation Of GaN-based Enhancement-mode HEMT Devices And Integrated Cirtuits
174. Research On The Etching Process For The Manufacture Of P-GaN Gate High Electron Mobility Transistors
175. Study On The Material Growth By Molecular Beam Epitaxy And Device Fabrication Of Ultra-thin Barrier Al(Ga)N/GaN HEMT
176. Study On Gallium Nitride Strained Channel High Electron Mobility Transistor Device And Physical Model
177. Research On Characteristics Of Enhanced P-GaN Grooved Gate HEMT Power Devices
178. Research On Degradation Mechanism Of P-GaN Enhancement-mode GaN HEMTs
179. The Research On Electrothermal Coupling Characteristics Of Si-based GaN HEMT Power Transistor
  <<First  <Prev  Next>  Last>>  Jump to