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Keyword [Hfets]
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1. The Interface Defect States And Schottky Characteristics Of InAlN/AlN/GaN HFETs
2. The Research Of Reliability Of InAlN/AlN/GaN Heterostructure Field-effect Transistors
3. Breakdown Mechanism And New Structure Of Vertical AlGaN/GaN HFETs
4. Investigation On The Double-Heterostructure AlGaN/GaN HFETs
5. Study Of New Structure AlGaN/GaN Heterostructure Field-Effect Transistors
6. Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect
7. Modeling and characterization of gallium nitride based metal-oxide-semiconductor heterostructure field-effect transistors for RF power amplifiers
8. Analytical physics based aluminium gallium nitride /gallium nitride HFET large signal model and nonlinearity analysis with nonlinear source resistance
9. High power III-nitride transistors for energy conversion
10. Distributed effects in power transistors and the optimization of the layouts of aluminum gallium nitride/gallium nitride HFETs
11. Characterization and modeling of III-N MOS-HFETs for high frequency applications
12. Design, characterization, and modeling of gallium nitride based HFETs for millimeter wave and microwave power amplifier applications
13. DC, microwave, and noise properties of GaN based heterojunction field effect transistors and their reliability issues
14. A Physics-Based AlGaN/GaN HFET Compact Model for Implementation in Circuit Simulators
15. Treatment of the Impacts of Transport Inflexion Points and Charge Trapping at the Surface States on Drain Current of AlGaN/GaN HFETs
16. The indium arsenide/indium antimonide-based and gallium arsenide/aluminum gallium arsenide-based heterostructure field-effect transistors grown on hetero-substrates
17. Investigation of ALD Dielectrics for Improved Threshold Voltage Stability and Current Collapse Suppression in AlGaN/GaN MOS-HFETs
18. Design Of Device Structure Of GaN-based Enhancement-mode P-channel HFET
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