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Keyword [Heterostructures]
Result: 141 - 160 | Page: 8 of 9
141. Characterization and device applications of silicon-germanium and compound semiconductor-based heterostructures
142. Modulation spectroscopy of III-V and II-VI semiconductors and their heterostructures
143. Growth by molecular beam epitaxy and characterization of Al(x)Ga(1-x)N alloys and heterostructures
144. Blue-green light generation by frequency doubling in (112)-oriented III-V heterostructures
145. Stimulated emission and lasing in III-V nitride heterostructures
146. Selective epitaxial growth of Si and SiGe/Si heterostructures in a hot-wall tubular low pressure chemical vapor deposition system
147. Cross-sectional and plan view scanning tunneling microscopy of GaAs heterostructures and surfaces
148. Magneto-optical study on II-VI semiconductor epilayers and their heterostructures using diluted magnetic semiconductors
149. THz time-domain spectroscopy of coherent cyclotron phenomena in gallium arsenide heterostructures
150. Optical properties of III-V and II-VI strained semiconductor heterostructures under pressure
151. In situ laser processing of high critical transition temperature superconductor and semiconductor heterostructures
152. The characterization and growth of novel III-V heterostructures
153. Molecular beam epitaxy of gallium arsenide/alluminum gallium arsenide heterostructures and electron correlation effects in two-dimensional systems
154. An electronic and optical theory of semiconductor heterostructures
155. Studies of silicon germanium tunneling heterostructures grown by silicon molecular beam epitaxy
156. Molecular beam epitaxy of strained heterostructures and their application to optoelectronic devices
157. Influence of the silicon donor (DX center) and growth temperatures on gallium arsenide/aluminum gallium arsenide heterostructures grown by molecular beam epitaxy
158. Molecular beam epitaxial growth and characterization of gallium antimonide, and its use in gallium antimonide/aluminum antimonide heterostructures
159. THE MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY GALLIUM-ARSENIDE - ALUMINUM-GALLIUM - ARSENIDE HETEROSTRUCTURES FOR MICROWAVE DEVICE APPLICATIONS (QUANTUM WELLS, IMPURITY, PHOTOLUMINESCENCE, MODULATION DOPING)
160. NUMERICAL SIMULATION OF SEMICONDUCTOR HETEROSTRUCTURES (GALLIUM-ARSENIDE, SOLAR CELL, ISOTYPE HETEROJUNCTION)
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