Heterojunction bipolar transistors - Globe Thesis

Keyword [Heterojunction bipolar transistors] Result: 1 - 20 \| Page: 1 of 3
1.	The Study And Design Of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs)
2.	Experimental Research On Reliability Of GeSi/Si Heterojunction Bipolar Transistors (HBTs)
3.	Experimental Research On Reliability Of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) Under Thermal And Electrical Stress
4.	The Study Of High Frequency SiGe Heterojunction Bipolar Transistors (HBT) Low-noise Amplifier
5.	The Frequency Characteristics Of The Sige Hbt For High Current Analytical Model
6.	Research On Parameter Extraction And Modeling For RF/Microwave SiGe HBT
7.	Technology Research On Silicon Germanium Heterojunction Bipolar Transistors And Low Noise Amplifiers
8.	Research On Design Method Of GaAs HBT-based Ultra-high-speed Folding-Interpolating ADC Chip
9.	A Study Of The Effect Of Proton Irradiation On The Electrical Characteristics Of InP/inGaAs HBTs
10.	Research On The Electrical Characteristics And Proton Irradiation Effects Of InP/InGaAs HBTs
11.	Research On Multi Physical Modeling Of InGaP/GaAs HBT Devices
12.	Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
13.	Design, fabrication, and modeling of indium phosphide double-heterojunction bipolar transistors with sub-millimeter wave cutoff frequency
14.	Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments
15.	Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits
16.	Design of millimeter-wave power amplifiers using indium phosphide heterojunction bipolar transistors
17.	Wafer-fused aluminum gallium arsenide/gallium arsenide/gallium nitride heterojunction bipolar transistors
18.	Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy
19.	Design considerations for 400 GHz indium phosphide/indium gallium arsenide heterojunction bipolar transistors
20.	The mixed-mode reliability stress of silicon-germanium heterojunction bipolar transistors
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