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Keyword [Hbts]
Result: 1 - 20 | Page: 1 of 2
1.
Research And Design Of Two-stage High-Frequency Amplifiers Based On SiGe/Si HBTs
2.
The Study And Design Of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs)
3.
Experimental Research On Reliability Of GeSi/Si Heterojunction Bipolar Transistors (HBTs)
4.
Experimental Research On Reliability Of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) Under Thermal And Electrical Stress
5.
Simulation Of Microwave Power SiGe HBTs For Improving Linearity
6.
The GP (Gummel-Poon) Modeling Of HBTs And The Design Of OEIC Photoreceiver Front-End
7.
Study Of γ Radiation Effect On InGaP/GaAs HBTs
8.
Research On Design Method Of GaAs HBT-based Ultra-high-speed Folding-Interpolating ADC Chip
9.
A Study Of The Effect Of Proton Irradiation On The Electrical Characteristics Of InP/inGaAs HBTs
10.
Total Ionizing Radiation Effect Of Typical SiGe HBTs
11.
Research On The Electrical Characteristics And Proton Irradiation Effects Of InP/InGaAs HBTs
12.
Investigation Of Radiation Damage Characteristics For SIGe Power HBTs And Flexible PIN Diode
13.
Design And Simulation Of Novel SOI SiGe HBTs Based On Uniaxial/Biaxial Strain Technology
14.
Operation of inverse mode silicon-germanium HBTs and ultra-scaled CMOS devices in extreme environments
15.
Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization
16.
Operating voltage constraints and dynamic range in advanced silicon-germanium HBTS for high-frequency transceivers
17.
Design of high-speed silicon-germanium HBT circuits for wideband transceivers
18.
Design and fabrication of indium gallium nitride/gallium nitride heterojunction bipolar transistors for microwave power amplifiers
19.
Development of gallium nitride materials for heterojunction bipolar transistors
20.
Novel silicon-germanium BiCMOS device physics phenomena and their application to power amplifiers
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