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Keyword [HEMTS]
Result: 101 - 120 | Page: 6 of 7
101.
Gallium nitride-based HEMTs for microwave power and noise: Physics and application
102.
Aluminum gallium nitride/gallium nitride HEMTs for high-power applications: Transistor design issues and process development
103.
Advanced polarization-based design of aluminum gallium nitride/gallium nitride HEMTs
104.
Fabrication and characterization of heterojunction transistors
105.
Characterizing and suppressing DC-to-RF dispersion in aluminum gallium nitride/gallium nitride high electron mobility transistors
106.
Novel dielectric film processing and characterization
107.
Trapping Effects in Aluminum Gallium Nitride/Gallium Nitride HEMTs for High Frequency Applications : Modeling and Characterization Using Large Signal Network Analyzer and Deep Level Optical Spectroscopy
108.
Non-Linear MMIC Design using Aluminum Gallium Nitride/Gallium Nitride HEMT Technology
109.
Scrambling with multigate MESFETs and HEMTs
110.
High-voltage gallium nitride HEMTs with low on-resistance for switching applications
111.
Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors
112.
Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications
113.
Analysis of failure mechanisms that impact safe operation of ALGaN/GaN HEMTs
114.
The Study Of Trapping Effect And Characterization Technique Of GaN Based Hemts
115.
Hybrid Modeling Of GaN HEMTs Small Signal Equivalent Circuit Based On Particle Swarm Optimization
116.
Reliability Of GaN-based Hemts Under On-state And Off-state Electrical Stress
117.
Research On GaN HEMTs With Enhanced Linearity
118.
Study On GaN Based Terahertz HEMTs With Buried Layer
119.
Research On All-GaN Integration Technology Based On Dynamic Characteristics Of GaN HEMTs
120.
MBE Epitaxial Growth Of Ultra-thin Barrier Layer AlN/GaN Heterostructure
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