Gallium arsenic - Globe Thesis

Keyword [Gallium arsenic] Result: 1 - 18 \| Page: 1 of 1
1.	Research On Noise Parameter Using For Characteristic Radiation Hardness Of GaAs-based Semiconductor Material
2.	Technical Research On High-speed Photoconductive Switches For RF Signal Processing
3.	Study of carrier injection for performance optimization of a reconfigurable waveguide digital optical switch on indium gallium arsenic phosphide/indium phosphide
4.	Design and characterization of indium gallium arsenic phosphide/indium phosphide and indium(aluminum) gallium arsenic antimonide/gallium antimonide laser diode arrays
5.	Strongly-guided indium phosphide/indium gallium arsenic phosphide Mach-Zehnder modulator for optical communications
6.	Carrier dynamics and gain in 1.3-micron indium gallium arsenic nitride/gallium arsenic phosphide/gallium arsenide laser diodes
7.	Molecular beam epitaxy of narrow gap quantum wells: Indium antimonide, Indium-gallium-arsenic and elemental antimony
8.	Study of broadened waveguides in gallium indium arsenide antimonide/aluminum gallium arsenic antimonide quantum well lasers
9.	Molecular beam epitaxy and characterization of gallium arsenic nitride and its application to quantum dot cascade light sources
10.	High-power indium gallium arsenic phosphide-active diode lasers at lambda = 808 nm
11.	Material growth and characterization of gallium arsenic antimide on gallium arsenide grown by MOCVD for long wavelength laser applications
12.	Design and characterization of midinfrared semiconductor lasers based on indium gallium arsenic phosphide and indium aluminum gallium arsenic antimide material systems
13.	Indium gallium arsenic nitride antimonide: A novel material for long-wavelength semiconductor lasers
14.	Optical characterization of indium gallium arsenic nitride/gallium arsenide semiconductor heterostructures and their potential for photodetector applications
15.	Development of nanoscale optical devices based in indium gallium arsenic phosphide/indium phosphide material system for fiber-optic communications
16.	Ultrafast all-optical switching based on indium gallium arsenic phosphide grown by helium plasma-assisted molecular beam epitaxy
17.	Ridge waveguide mid-infrared indium gallium arsenic antimonide quantum well lasers fabricated with pulsed anodization etching
18.	MODELING AND OPTIMIZATION OF GALLIUM-ARSENIC SCHOTTKY BARRIER MIXER DIODES (SUBMILLIMETER)
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