GaN HEMTs - Globe Thesis

Keyword [GaN HEMTs] Result: 21 - 40 \| Page: 2 of 4
21.	Structure Design And Reliability Study Of AlGaN/GaN HEMTs
22.	The Parameter Extraction And Analysis Of GaN Devices Small-Signal Equivalent Circuit
23.	Research On AlGaN/GaN High Electron Mobility Transistor’s Reliability And New Device Structure Design
24.	The Investigation Of The Stress Effect On The Electrical Properties Of AlGaN/GaN HEMTs
25.	Study And OptimΜm Of Self-heating Effects In GaN-HEMT Device
26.	Development Of C-band Broadband Power Amplifiers Using GaN HEMTs
27.	Study On Junction Temperature Measurements And Temperature Dependent Characteristics Of GaN HEMTs
28.	Reliability Of Enhancement-mode AlGaN/GaN HEMTs Treated By Fluorine Plasma Ions Under Electrical Stress
29.	Electric Field Optimization And Frontier Fabrication Techniques For High Voltage Enhancement-Mode AlGaN/GaN HEMTs
30.	Research On Microwave GaN HEMT Large-Signal Model Parameter Extraction
31.	Investigation On Characteristics And Current Collapse Of InAlN/GaN HEMTs
32.	Study Of Polarization Coulomb Field Scattering Influfence On The Gate-source And Gate-drain Parasitic Access Resistances Of GaN-based Electron Devices
33.	Research Of Characteristic Contrast Between GaN HEMTs And GaAs PHEMTs
34.	Research On The Scaling-down Laws Of Ga-face GaN HEMTs Related New Device Structures
35.	Study On High Electric-field And High Temper-Ature Reliability Of AlGaN/GaN HEMTs
36.	Physical-based Statistical Model For Microwave GaN HEMTs
37.	Design Of An S-Band Broadband Power Amplifier Based On GaN HEMTs
38.	Research On The Applications Of Thermally Evaporated SiO_x In Gallium Nitride High-electron-mobility Transistors
39.	Design And Key Technologies Of Novel AlGaN/GaN HEMTs With Electric Field Modulation Effect
40.	Reliability Mechanism Related To Defects In GaN-based Power Electronics Devices
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