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1. The Study On The Physical Model And Key Process Technologies Of AlGaN/GaN HEMT
2. Device Physics And Related Experimental Studies Of X-band AlGaN/GaN High Electron Mobility Transistors
3. Characteristic Of AlGaN/GaN Heterostructures And Of High Electron Mobility Transistors
4. Study On In-Situ Growth Of Dielectric MIS-HEMT
5. Study On HT Characteristics And Reliability Of GaN HEMT
6. Fabrication And Characterization Of Recessed-gate MOS-HEMTs
7. .algan / Gan Hemt Current Collapse Mechanism Study
8. Mechanism Of Gan Hemts Current Collapse Effect And Experimental Study
9. .algan / Gan Hemts Current Collapse Effects Testing And Simulation Study
10. .algan / Gan Hemts The Class E Power Amplifier Design
11. Macro Model And Test Of Gan Hemts Device Equivalent Circuit Analysis
12. Study Of AlGaN/GaN HEMT Characteristics And Suppressing Current Collapse
13. Study On The AlGaN/GaN MOS-HEMT Device With High-κ Materials As Gate Dielectric
14. Study On TCAD Simulation Of AlGaN/GaN High Electron Mobility Transistor
15. Algan/gan High Electron Mobility Transistor Device Modeling And Characteristic Research
16. Study On Characteristic Simulation Of The AlGaN/GaN HEMTs
17. Analysis The Field-plates Structure And Breakdown Characteristics Of Algan/gan Hemts
18. The Parameter Extraction And Analysis Of GaN Devices Small-Signal Equivalent Circuit
19. Investigation On Characteristics And Current Collapse Of InAlN/GaN HEMTs
20. Research And Design Of 600V GaN HEMT Device
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