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Keyword [Breakdown voltage]
Result: 141 - 160 | Page: 8 of 10
141.
Research Of New SOI High-voltage Devices Based On The Technology Of The Enhanced Field Electric Layer
142.
Research On The Design Of Buried-layer In Bulk-silicon LDMOS
143.
Fabrication Of Si-Based 20A/600V JBS And Study On 40mA/120V Vertical Channel CRD
144.
Research On Power VDMOS Design And Optimization Methods
145.
The Investigation And Optimization Of High-Voltage Power MOSFET Cell
146.
Research On The Technology And New Structure Of Terminal In The High Voltage Power Devices
147.
Design And Process Analysis Of Novel SOI Devices With Ultra-low Specific On-resistance And High Voltage
148.
Structure Optimization And Experimental Investigation Of High Voltage 4H-SiC PiN Diodes
149.
Research And Design Of A Vertical Current Regulator Diode
150.
Design Optimization And Experimental Investigation Of High Voltage Silicon Carbide JBS Diode
151.
The Study Of The Structure And Electrical Characteristics Of SiC Power Diode
152.
Novel Structure Of Suppressing LIGBT Substrate Leakage Current
153.
Research Of Novel High Speed And High Voltage FS-IGBT Device Structure
154.
Study Of Easily Integratable Trench Type Low Specific On-resistance Power MOSFET
155.
Design Of N-channel Vdmos With Breakdown Voltage Of 1500v
156.
Research Of Technology To Improve Breakdown Voltage And Novel Structure Of Enhancement GaN HEMT
157.
Research And Realization Of Ultra-Low Specific On-Resistance LDMOS With Novel Field Plate
158.
Breakdown Mechanism And New Structure Of Vertical AlGaN/GaN HFETs
159.
Design And Technical Realization Of LDMOS With Novel Temination
160.
A Simulation Study Of A Novel LDMOS With New Junction Termination
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