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Keyword [Breakdown voltage]
Result: 61 - 80 | Page: 4 of 10
61.
Influence Of Floating Metal Ring On The Characteristics Of AlGaN/GaN Heterostructures Schottky Diode
62.
Design And Research Of High Voltage SOI LDMOS Devices
63.
The Structures Design And Characteristics Research Of SiC Power UMOSFET Devices
64.
Breakdown Theory Of SOI Lateral Super Junction Devices
65.
Design Of Trench CoolMOS Termination Structure
66.
Based On The Ldmos Structure Of The Mosfet Research
67.
Study Of Structure Optimization And Theoretical Model For4H-SiC MESFET
68.
The Study On The Design And Key Process Of4H-SiC Power UMOSFETs
69.
Isolation And Tunnel Injection RC-IGBT And Breakdown Voltage Design
70.
New Structures And Field Optimization Techniques For High Voltage AlGaN/GaN HEMTs
71.
Investigation On Breakdown Characteristics And New Structures Of AlGaN/GaN HFET
72.
Study On The Electrical Properties Of Trench Barrier Schottky Diode
73.
Research On Optimization Theory Of The Vertical Doping Profile For Lateral Integrated High Voltage Device
74.
The Characteristics Research Of Power Umosfet Devices And New Structures Design
75.
Properties Investigation And Simulation Analysis Of SiC Power Device
76.
Simulation And Research Of SJ LDMOS Devices
77.
Study On The Characteristics Of High Electron Mobility GaN-based Double-heterostructure Materials And Devices
78.
Study Of The Floating Field Plate In AlGaN/GaN HEMTs
79.
Research On4H-SiC SJ JBS With Ultra Low Leakage Current
80.
Study On MOS-Type Devices On SOI Substrare With Low On-State Resistance For Lateral High Voltage Applications
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