Arsenide - Globe Thesis

Keyword [Arsenide] Result: 181 - 200 \| Page: 10 of 10
181.	Gallium arsenide integrated circuit technology: Ion implantation techniques and palladium-germanium ohmic contact processing
182.	High resolution x-ray diffraction of high quality 2 micron quaternary indium gallium arsenide antimonide digital alloy heterostructures grown by modulated molecular beam epitaxy
183.	Gold/niobium thin film metallizations for gallium arsenide devices and circuits
184.	Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices
185.	Quantum interference control of free carrier photo-injection in bulk gallium arsenide
186.	Epitaxial structure dependence of gain, refractive index, and linewidth enhancement factor in gallium arsenide and indium gallium arsenide broad-area quantum well lasers
187.	Global simulation of a gallium arsenide metal-semiconductor-metal photodetector for the conversion of optical signals into microwaves
188.	Design and fabrication of novel indium gallium arsenide and aluminum gallium indium phosphorus quantum well lasers by metalorganic chemical vapor deposition
189.	Unstrained and strained semiconductor nanostructure fabrication via molecular beam epitaxical growth on non-planar patterned gallium arsenide(001) substrates
190.	Gas source molecular beam epitaxy of lasers and detectors using strained layers of indium(1-x)gallium(x)arsenide(y)phosphide(1-y)
191.	Investigation of indium arsenide antimonide material system for uncooled long-wavelength infrared photodetector applications
192.	Compound semiconductor native oxide-based technologies for optical and electrical devices grown on gallium arsenide substrates using MOCVD
193.	Integrated planar gallium arsenide Schottky mixers for submillimeter wavelength receivers
194.	Low-temperature-grown gallium arsenide photomixers designed for increased terahertz output power
195.	Sub-terahertz traveling-wave low-temperature grown-gallium arsenide p-i-n photodetector
196.	A high-power, nanosecond, submillimeter-wave source and application to photoconductivity measurements in high-purity gallium arsenide
197.	Advancements in the gallium arsenide/nickel aluminum material system and its potential for device applications: Progress towards the realization of a metal base transistor
198.	Scanning probe microscopy studies of the highly strained epitaxy of indium arsenide on gallium arsenide(001) and scanning probe based imaging and manipulation of nanoscale three-dimensional objects
199.	Oxide-based electronics in gallium arsenide
200.	Strained-layer indium gallium arsenide-gallium arsenide-aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition
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