Aluminum Gallium Arsenide - Globe Thesis

Keyword [Aluminum Gallium Arsenide] Result: 21 - 36 \| Page: 2 of 2
21.	Differential absorption lidar measurements of atmospheric water vapor using a pseudonoise code modulated aluminum gallium arsenide laser
22.	Atomic layer epitaxy of gallium arsenide and aluminum gallium arsenide for device applications
23.	Novel optoelectronic devices using intersubband transitions in gallium arsenide/aluminum gallium arsenide quantum wells and superlattices: Theory, fabrication, and measurement
24.	Design and fabrication of gallium arsenide-aluminum gallium arsenide two-mode cross-coupled bistable laser diodes for optical switching and memory applications
25.	Resonant tunneling in aluminum gallium arsenide/gallium arsenide double-barrier structures
26.	The characterization of aluminum gallium arsenide resonant tunneling diodes at microwave frequencies
27.	Lateral modulation-doped structures of aluminum-gallium arsenide/gallium arsenide grown by selective area liquid-phase epitaxy
28.	Electron transport in wide parabolic gallium arsenide/aluminum gallium arsenide wells
29.	A three-dimensional semiconductor device simulator for gallium arsenide/aluminum gallium arsenide heterojunction device analysis
30.	Gigahertz guided-wave acoustooptic Bragg diffraction in zinc-oxide/gallium-arsenide/aluminum-gallium-arsenide composite waveguides and integrated optic RF spectrum analyzers
31.	The gallium-arsenide/aluminum-gallium - arsenide tunneling emitter bipolar transistor: Theory and experiment
32.	Influence of the silicon donor (DX center) and growth temperatures on gallium arsenide/aluminum gallium arsenide heterostructures grown by molecular beam epitaxy
33.	A study of gallium-arsenide - aluminum-gallium - arsenide semiconductor laser devices for monolithic integrated optical circuits
34.	Molecular-beam epitaxial growth and characterization of aluminum gallium arsenide/indium gallium arsenide single quantum-well modulation-doped field-effect transistor structures
35.	THE MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY GALLIUM-ARSENIDE - ALUMINUM-GALLIUM - ARSENIDE HETEROSTRUCTURES FOR MICROWAVE DEVICE APPLICATIONS (QUANTUM WELLS, IMPURITY, PHOTOLUMINESCENCE, MODULATION DOPING)
36.	EXPERIMENTAL STUDIES OF LATERAL ELECTRON TRANSPORT IN GALLIUM-ARSENIDE - ALUMINUM-GALLIUM - ARSENIDE HETEROSTRUCTURES
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