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Keyword [Algan/gan]
Result: 101 - 120 | Page: 6 of 10
101.
Breakdown Mechanism And New Structure Of AlGaN/GaN HEMT With Back-barrier Buffer Layer
102.
Study On GaN-based Enhencement-mode Devices And Regrowth Of AlGaN/GaN Heterostructure
103.
The Anisotropic Transport Property Of Two-dimensional Electron Gas In Non-polar AlGaN/GaN Heterojunctipn
104.
Performance Analysis Of ALGaN/GaN Field Effect Schottky Diode
105.
The New Structure And Process Research Of Silicon And Gallium Nitride Based Semiconductor Functional Device
106.
Modeling Of AlGaN/GaN HEMt Power Devices And High Effciency Amplifier Design
107.
A Study Of The Novel Structure Of GaN-Based P-i-n Style Ultraviolet Detector And The Photoelectric Characteristics
108.
The Effects Of Gate Dielectrics On Performances Of AlGaN/GaN Metal-insulator-semiconductor High-electron-mobility Transistors
109.
Study Of Radiation Effects Of GaN-based Semiconductor Materials And HEMTs
110.
Study On Characteristic Simulation Of The AlGaN/GaN HEMTs
111.
Failure Mechanism Research Of AlGaN/GaN HEMT Under Strong-electrical Stresses
112.
The Study Of Fluorine-based Plasma Treatment On AlGaN/GaN HEMTs
113.
Study On The Properties Of GaN-based HEMT
114.
Analysis The Field-plates Structure And Breakdown Characteristics Of Algan/gan Hemts
115.
Study On Epitaxy Of Gan Hemt Structure On Si Substrate
116.
The Fabrication Of AlGaN/GaN HEMT
117.
Structure Design And Reliability Study Of AlGaN/GaN HEMTs
118.
Researches On The Characteristics Of AlGaN/GaN MIS-HENT Power Switching Device
119.
The Impact Of Pressure On Transport Properties Of AlGaN/GaN High Electron Mobility Transister
120.
The Research Of Device Characteristics For AlGaN/GaN Polarization-doped Field-effect Transistors
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