AlGaN/GaN heterostructure - Globe Thesis

Keyword [AlGaN/GaN heterostructure] Result: 1 - 20 \| Page: 1 of 2
1.	Development And Characteristic Analysis Of AlGaN/GaN Heterostructure High Electron Mobility Transistors
2.	The Characteristic Research Of AlGaN/GaN Heterostructure Field Effect Transistors
3.	Study On Growth Mechanism Of High Quality AlN By Molecular Beam Epitaxy And Physical Properties Of Related Materials
4.	The Research Of Characteristic Parameters For AlGaN/GaN Heterostructure Materials And Devices
5.	Characteristic Of AlGaN/GaN Heterostructures And Of High Electron Mobility Transistors
6.	Study On Leakage Mechanism Of GaN Buffer Layer In GaN-based Heterostructures
7.	The Study Of AlGaN/GaN Heterostructure And N-type GaN Film On Vicinal Substrate
8.	The Temperature-dependent Electrical Properties Of AlGaN/GaN Heterostructures
9.	.algan / Gan Heterostructure Materials And Devices Research
10.	The Research On AlGaN/GaN Heterostructure Devices To Enhance The Concentration Of 2DEG
11.	Study On AlGaA/GaN MOS-HEMT With High K Gate Dielectric
12.	Under Biaxial Strain Algan/gan Two-dimensional Electron Gas Migration Rate Calculation
13.	Study On GaN-based Enhencement-mode Devices And Regrowth Of AlGaN/GaN Heterostructure
14.	A Study Of The Novel Structure Of GaN-Based P-i-n Style Ultraviolet Detector And The Photoelectric Characteristics
15.	Study On Epitaxy Of Gan Hemt Structure On Si Substrate
16.	The Studying Of ESD Protection Device Based On AlGaN/GaN Heterjunction
17.	A Study Of AlN/GaN Digital Alloy Barrier Quasi-AlGaN/GaN Heterostructure
18.	Studies Of Carrier Mobility And Related Device Paramaters In Algan/gan Heterostructure Field-effect Transistors
19.	Study On GaN Based HEMT-like Planar Gunn Diode In Terahertz Band
20.	Study Of Polarization Coulomb Field Scattering Influence On The Characteristics Of Recessed-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
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