molecular beam epitaxy - Globe Thesis

Keyword [molecular beam epitaxy] Result: 81 - 100 \| Page: 5 of 7
81.	Deep level defects in electron-irradiated aluminum gallium nitride grown by molecular beam epitaxy
82.	Optical properties of II-VI compound low-dimensional structures grown by molecular beam epitaxy
83.	Catalyst-free III-nitride Nanowires by Plasma-assisted Molecular Beam Epitaxy: Growth, Characterization, and Application
84.	Investigation of doped zinc oxide by molecular beam epitaxy for n- and p-type Conductivity
85.	Selective molecular beam epitaxy of germanium on oxide-covered silicon
86.	Study of ion beam assisted deposition of low dislocation density gallium nitride thin films using molecular beam epitaxy
87.	Hybrid Molecular Beam Epitaxy for High Quality Strontium Titanate
88.	Graphene Synthesis by Thermal Cracker Enhanced Gas Source Molecular Beam Epitaxy and Its Applications in Flash Memory
89.	Electrical, optical, and defect properties of carbon-doped gallium nitride grown by molecular-beam epitaxy
90.	Electrical and optical properties of indium nitride and indium-rich nitrides prepared by molecular beam epitaxy for opto-electronics applications
91.	Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy
92.	Arsenic-doping of silicon by molecular beam epitaxy
93.	Self-assembled nanostructures of group IV elements on germanium substrate by molecular beam epitaxy
94.	Silicon carbon(001) gas-source molecular beam epitaxy from methyl silane and silicon hydride: The effects of carbon incorporation and surface segregation on growth kinetics
95.	Morphological evolution during molecular beam epitaxy of germanium/germanium(001) and silicon/germanium(111)
96.	Molecular beam epitaxy growth and characterization of beryllium-based II-VI semiconductor materials and distributed Bragg reflectors for potential application in visible light emitters
97.	Nanoscale patterned growth by molecular beam epitaxy and its applications
98.	Carbon incorporation pathways and lattice site distributions in silicon carbide/silicon(001) and germanium carbide/germanium(001) alloys grown by molecular beam epitaxy
99.	Growth of chalcopyrite-structure semiconductors zinc tin arsenide and zinc tin phosphide by molecular beam epitaxy
100.	Red and infrared phosphide materials grown by solid source molecular beam epitaxy
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