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Keyword [indium phosphide]
Result: 41 - 60 | Page: 3 of 4
41.
Self-assembled indium arsenide quantum-dash lasers on indium phosphide substrates
42.
Dielectric-enhanced quantum-well intermixing in lambda = 1.55 micron indium gallium arsenic phosphide/indium phosphide laser structures
43.
Submicron scaling in indium phosphide/indium gallium arsenide single heterojunction bipolar transistors
44.
Modeling thermal stresses and defects in single crystal indium phosphide grown from the melt
45.
Photoluminescence studies of surfactant modified microstructures in gallium indium phosphide
46.
Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy
47.
The effects of the surfactant antimony on ordering and phase separation in gallium-indium-phosphide grown by organometallic vapor phase epitaxy
48.
Control of defects in bulk indium phosphide crystals: The relationship between growth parameters and the control of crystallographic and electronic properties
49.
Surface chemistry and physics of III/V compound semiconductors
50.
1.55 micron wavelength indium gallium arsenide/indium aluminum arsenide/indium phosphide velocity-matched distributed photodetectors
51.
Electronic structures of indium phosphide, cadmium selenide and silver nanocrystals
52.
Material and device characterization of indium phosphide/indium gallium arsenide avalanche photodiodes for multigigabit optical fiber communications
53.
Interfacial structures and electrical properties of titanium and germanium/nickel metallizations to indium phosphide (thin films)
54.
The chemistry and physics of indium phosphide semiconductor nanocrystals
55.
The effect of electric fields on the formation and annealing of stable radiation induced defects in indium phosphide semiconductor junctions
56.
Interfacial structures and electrical properties in palladium-based metallizations to n-type indium phosphide
57.
Properties of copper in gallium arsenide and indium phosphide
58.
Studies of indium aluminum arsenide/indium gallium arsenide and gallium indium phosphide/gallium arsenide heterostructure FET's for high-speed applications
59.
Defect structure of rare-earth doped indium phosphide and indium gallium phosphide alloys prepared by metalorganic vapor phase epitax
60.
Organometallic vapor-phase epitaxial growth and characterization of III-V semiconductor alloys emitting visible light: Gallium arsenic phosphide, gallium indium phosphide, and aluminum gallium indium phosphide
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