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Keyword [MOCVD]
Result: 81 - 100 | Page: 5 of 7
81. Iron-doped zinc oxide films and nanostructures for spintronics
82. Zinc beta-iminoesterates for the growth of zinc oxide via atmospheric pressure metalorganic chemical vapor deposition (AP-MOCVD)
83. Microstructures of aluminum gallium nitride epitaxial layers
84. Photoluminescence and Resonance Raman Spectroscopy of MOCVD Grown GaAs/AlGaAs Core-Shell Nanowires
85. Optical studies of Zinc Oxygen grown by metalorganic chemical vapour deposition
86. Epitaxial Deposition of Low-Defect Aluminum Nitride and Aluminum Gallium Nitride Films
87. MOCVD growth of gallium nitride with indium surfactant
88. Growth and characterization of room temperature ferromagnetic manganese:gallium nitride and manganese:gallium indium nitride for spintronic applications
89. Amidinate complexes of magnesium and first row transition metals: Source compounds for semiconductor films
90. Metal-organic chemical vapor deposition of cadmium oxide-based transparent conductors: Precursor design, film growth, and film characterization
91. Homogeneous olefin polymerization with organovanadium complexes, and, Synthesis and characterization of III-V single-source precursor molecules for MOCVD
92. Chemical vapor deposition of high permittivity thin films: Processing, structure and properties
93. Growth and characterization of thin and thick gallium nitride
94. In-situ and post-growth investigation of low temperature Group III-nitride thin films deposited via MOCVD
95. Electrical characterization of N-type gallium nitride grown by metalorganic vapor deposition (MOCVD) on sapphire
96. Surface etching of 6H-silicon carbide (0001) and its effects on growth of gallium nitride, aluminum nitride by MOCVD, and silicon carbide by APCVD
97. MOCVD of multimetal and noble metal films
98. III-Nitride semiconductor films and device structures grown by low-pressure MOCVD
99. MOCVD growth and characterization of epitaxial quantum dots for optoelectronic devices
100. MOCVD growth and characterization of indium arsenide antimonide/indium arsenide(antimonide phosphide) on indium arsenide substrate for the mid-infrared laser applications
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