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Keyword [Insulator]
Result: 161 - 180 | Page: 9 of 10
161.
Surface Texture Design Of The Superhydrophobic Composite Insulator Sheds
162.
Preparation And In-situ Characterization Of Ultra-thin VO
2
Epitaxial Films And Exploration On The MIT Phase Transition
163.
Investigation On Acoustic Absorption And Acoustic Isolation Based On Acoustic Metamaterial
164.
Preparation And Performance Optimization Of Weak Topological Insulator Bi
2
TeI Thermoelectric Materials
165.
Silicon Photoanode Modified By Ni@Co Core-Shell Particles For Water Oxidation
166.
Mechanism Of Tunable Negative Permittivity Behavior In Conductor-Insulator Percolative Composites
167.
Research On Preparation And Phase Transition Properties Of Silicon-based Vanadium Oxide Thin Films
168.
Preparation And Study On Electrical Properties Of Mica Tape-Epoxy Resin Composite Insulator
169.
Theoretical Study On The Magnetic And Electronic Structures Of LaXO
3
(X=Fe,Al)/SrTio
3
?BaTio
3
/SrTio
3
Heterostructures Tunned By Electric Field
170.
Fabrication And Electrical Properties Of Tin Islands On Superconducting Substrate NbSe
2
171.
Properties Of Bi
2
Se
3
And SnS Thin Film Devices
172.
The Study Of Hgte Crystal(111)Surface And HgTe/CdTe/GaAs Films By STM
173.
Constructing Of Insulator-based Heterojunction And Photocatalytic NO_X Reaction Mechnism
174.
Growth Of VO
2
Film And Interfacial Characteristics Of N-VO
2
/p-GaN Base Heterojunction
175.
Physical Property Control Of Ferrioc Materials Based On Reconstruction Of Substrate Surface
176.
Luminescence Properties And Mechanisms Of Silicon Self-Ton Implantation Into SOI In Different Implantation And Annealing Conditions
177.
The Phase Stability And Electric Switching Properties Of Trivalent Ions-doped Vanadium Dioxide Thin Films
178.
First-principle Study On Regulation Of Surface And Interface Energy Band Of Topological Insulator Bi
2
Te
3
179.
Finite Temperature Mean-Field Theory Of The Interaction Induced Band Gap Of The Trilayer Graphene
180.
Study On The Photoluminescence Properties And Plasmon Enhanced Luminescence Of Si~+/N~+ Co-implanted SOI
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