Font Size:
a
A
A
Keyword [Hbts]
Result: 1 - 7 | Page: 1 of 1
1.
Submicron scaling of indium phosphide/indium gallium arsenide heterojunction bipolar transistors toward terahertz bandwidths
2.
Hot carrier-induced degradation and gamma radiation-induced degradation in silicon-germanium HBTs and VCOs
3.
Physics-based modeling and characterization of indium gallium phosphide HBTs
4.
Sub-nanosecond Pulse Characteristics of Indium Gallium Phosphide /Gallium Arsenide HBTs
5.
The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition
6.
Submicron scaling in indium phosphide/indium gallium arsenide single heterojunction bipolar transistors
7.
Silicon germanium virtual substrate growth and silicon(1-y)germanium(y)/silicon(1-x)germanium(x)/silicon(1-y)germanium(y) HBTs for millimeter-wave applications
<<First
<Prev Next>
Last>>
Jump to
