Arsenide - Globe Thesis

Keyword [Arsenide] Result: 21 - 40 \| Page: 2 of 10
21.	Strain analysis at the heterointerfaces of III-V ternary alloys: Ultra-thin gallium arsenide phosphate/gallium arsenide superlattices
22.	Croissance et spectroscopie de boites quantiques diluees d'indium arsenide/indium phosphide(001) pour des applications nanophotoniques a 1,55 mu m
23.	Blister formation and layer transfer of nitrogen-implanted gallium arsenide
24.	Growth and characterization of alkanethiol self-assembled monolayers on gallium arsenide for use in optical biosensing applications
25.	Gallium arsenide photo-field emission
26.	The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires
27.	UV photopatterning, electron beam lithography and site-specific surface reactions of alkanethiolate self-assembled monolayers adsorbed on gold and gallium arsenide (001)
28.	Investigations of surface reconstructions and inverse Stranski Krastanov growth in indium gallium arsenide films
29.	Character of the electronic states near the metal-insulator transition in gallium manganese arsenide
30.	Scaling of indium gallium arsenide MOSFET into deep submicron regime
31.	High-k-indium arsenide metal-oxide-semiconductor capacitors formed by atomic-layer deposition
32.	Tunable terahertz detectors based on plasmon excitation in two dimensional electron gases in indium gallium arsenide/indium phosphide and aluminum gallium nitride/gallium nitride HEMT
33.	Defect structures and growth mechanisms of boron arsenide epilayers grown on 6H-silicon carbide and 15R-silicon carbide substrates
34.	Electrical and optical characterization and nanoscale patterning of gallium nitrogen arsenide synthesized by energetic beams
35.	Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE
36.	Electrical transport studies of molecular beam epitaxy grown gallium manganese arsenide epilayers and heterostructures
37.	Metal organic vapor phase epitaxy growth and electrical characterization of high-resistivity and lattice-mismatched indium-arsenic-phosphorus and aluminum-indium-arsenic-phosphorus buffer layers for indium arsenide and indium phosphide device application
38.	GasMBE growth and characterization of strained layer indium phosphide-gallium indium arsenide-aluminum indium arsenide Quantum cascade lasers
39.	Bandstructure engineering of indium arsenide quantum dots in gallium arsenide antimonide barriers for photovoltaic applications
40.	Terahertz emission spectroscopy of gallium arsenide and thin magnetic films
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