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Keyword [Gallium arsenide]
Result: 61 - 80 | Page: 4 of 5
61.
Light-exciton coupling in semiconductor micro- and nano-structures (Indium gallium arsenide)
62.
Time-resolved second harmonic generation studies of carrier and carrier-phonon dynamics at gallium arsenide surfaces (Gallium arsenide)
63.
Metal-insulator transitions in two dimensions at zero magnetic field in a p-type gallium arsenide heterostructure
64.
High pressure far-infrared magneto-spectroscopy of impurity and electronic states in gallium arsenide/aluminum gallium arsenide multiple quantum wells
65.
Photoluminescence and tunneling in Gallium arsenide/aluminum gallium arsenide single quantum wells
66.
Nonlinear optical properties of semiconductor quantum wells with opto-electronic applications
67.
High pressure far-infrared magneto-spectroscopy of impurity and free electron states in silicon-doped gallium arsenide using a novel diamond-anvil apparatus
68.
Study of monolithic nonlinear transmission lines (NLTLs) on gallium arsenide molecular beam epitaxial wafer
69.
Optically-induced switching, tunneling and relaxation processes in aluminum arsenide/gallium arsenide triple-barrier resonant tunneling diodes
70.
Ultrafast measurement of carrier transport in gallium arsenide electronic and optoelectronic devices
71.
Ballistic electron emission microscopy studies of electron scattering in gold/gallium arsenide Schottky diodes damaged by focused ion beam implantation
72.
Non-stationary transport models and their application in gallium arsenide MESFETs
73.
Native defect enhanced interdiffusion in aluminum gallium arsenide quantum well heterostructures
74.
Spectroscopic ellipsometry and photoellipsometry studies of n-type gallium arsenide
75.
A photoexcited three-component electron-hole plasma in type II gallium arsenide/aluminum arsenide quantum wells
76.
Effect of strain on the electronic structure of indium - gallium-arsenide--an angle-resolved photoemission study
77.
Ultrafast time-resolved photoluminescence studies of gallium-arsenide
78.
Time-resolved Raman scattering in gallium-arsenide multiple quantum well structures
79.
RAMAN-SCATTERING STUDIES OF THE STRUCTURE OF ION-IMPLANTED GALLIUM-ARSENIDE
80.
RECOMBINATION DYNAMICS IN QUANTUM WELL SEMICONDUCTOR STRUCTURES (GALLIUM-ARSENIDE, PHOTOLUMINESCENCE, RADIATIVE, TIME-RESOLVED ALUMINUM)
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