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Keyword [GaAs]
Result: 141 - 160 | Page: 8 of 9
141.
III-V semiconductor Quantum Well systems: Physics of Gallium Arsenide two-dimensional hole systems and engineering of mid-infrared Quantum Cascade lasers
142.
Electronic and optical properties of novel semiconductor heterostructures
143.
Characterizing charged muonium in gallium arsenide and silicon
144.
Pulsed-laser deposition and characterization of hetero-paired thin-film gallium arsenide
145.
Role of spin-orbit interaction and Berry's phase in Aharonov-Bohm oscillations
146.
Ultrafast dynamics and phase changes in solids excited by femtosecond laser pulses
147.
Increasing the critical thickness of InGaAs quantum wells using strain-relief technologies
148.
Ballistic transport in two-subband two-dimensional carrier systems at GaAs/AlGaAs heterojunctions
149.
Study of impurity modes in photonic crystals and study of power GaAs MESFETs
150.
Electrical, optical, and morphological studies of quantum confined InAs and GaAs semiconductor nanoparticles
151.
Far-infrared studies of electron-electron interactions in Si-doped GaAs/AlGaAs multiple quantum wells
152.
High-frequency phonon propagation and detection in III-V semiconductors
153.
Ultrafast time-resolved photoluminescence studies of gallium-arsenide
154.
RAMAN-SCATTERING STUDIES OF THE STRUCTURE OF ION-IMPLANTED GALLIUM-ARSENIDE
155.
Magneto-transport study of quantum phases in wide GaAs quantum wells
156.
Second quantum state transition in GaAs/AlGaAs resonant Bragg structure probed by modulation reflectance spectroscopy
157.
Tunable Fermi Contour Anisotropy in GaAs Electron and Hole Systems
158.
Study Of The High Field Transport Of Si-GaAs Photoconductive Semicongductor Switches And The Machnism Of The Surface Flashover
159.
Epitaxial Growth Of ?-? Materials On Step-free Ge Surface
160.
Generation Of Narrow-band THz Radiation Based On The Stimulated Raman Effect With GaAs Crystal And Theoretical Study On A Novel Method Of THz Detection
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