Research On Extreme Process Based On Electron Beam Exposure

Electron beam exposure technology plays a key role in the fabrication of nanostructures,which has been widely used in the fields of nanoscience research,fabrication of micro-nano prototype devices,biomedicine and other fields.In this paper,a series of extreme size graphic structures were fabricated based on the electron beam exposure technology,which provides broader ideas and corresponding key technical support for the fabrication of various micro-nano devices.The main studies and achievements are mainly as following:1.A fabrication process of silicon nanocolumn array was proposed.The main process included the use of electron beam lithography combined with Al film deposition and lift-off process to make etching mask and ICP etching of silicon substrate covered with circular Al mask array.The process has the advantages of simple process and high stability.In addition,it can be used to fabricate silicon nanocolumn arrays with adjustable height and controllable morphology in a certain range.2.Based on the process of silicon nano-column array,a more difficult fabrication process of silicon nano-needle array has been developed,and the stable fabrication of silicon nano-needle array structure with adjustable height and minimum top size less than 10 nm and the maximum aspect ratio of 1450 has been successfully realized through further study of etching rules and optimization of process parameters.3.The Nano-Gap antenna structure with Gap size of 15 nm on silicon substrate was successfully fabricated by using electron beam lithography to fabricate resist patterns and magnetron sputtering to deposit Au thin films,and combined with the lift-off process.It provided a reference for the fabrication of devices with smaller gap size.